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 Ordering number:ENN6423
N-Channel Silicon MOSFET
2SK2977LS
DC/DC Converter Applications
Features
* Low ON resistance. * 4V drive.
Package Dimensions
unit:mm 2078B
[2SK2977LS]
10.0
3.5
4.5
2.8
3.2
7.2 16.0
16.1
0.9 1.2
14.0
3.6
0.7
0.75 1 2 3
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1%
Tc=25C
2.55
2.55
Conditions
2.4
0.6
1.2
1 : Gate 2 : Drain 3 : Source SANYO : TO220FI-LS
Ratings 30 20 30 120 2.0 30 150 -55 to +150
Unit V V A A W W
C C
Electrical Characteristics at Ta = 25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=18A VGS=10V, ID=18A VGS=4V, ID=18A 1.0 15 27 15 25 22 35 Conditions Ratings min 30 10 10 2.4 typ max Unit V A A V S m m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31000TS (KOTO) TA-2275 No.6423-1/4
2SK2977LS
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=18A VDS=10V, VGS=10V, ID=18A VDS=10V, VGS=10V, ID=18A IS=30A, VGS=0 Conditions Ratings min typ 1600 800 300 15 450 150 180 40 5 12 1.0 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
VDD=15V VIN 10V 0V VIN PW=10s D.C.1% ID=18A RL=0.83
D
VOUT
G
P.G
50
S
30
ID -- VDS
8. 6.0 0V V
4.0 V
30
ID -- VGS
VDS=10V
25
25
Drain Current, ID - A
0V
Drain Current, ID - A
10.
20
20
15
3.0V
15
Tc= 75 C
0 0.5 1.0 1.5 2.0 2.5
5
VGS=2.5V
5
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0 3.0 3.5 4.0
Drain-to-Source Voltage, VDS - V
50
IT01054 40
Gate-to-Source Voltage, VGS - V
--25
25C
C
10
10
IT01055
RDS(on) -- VGS
Static Drain-to-Source On-State Resistance, RDS(on) - m Tc=25C ID=18A
RDS(on) -- Tc
Static Drain-to-Source On-State Resistance, RDS(on) - m
45 40 35 30 25 20 15 10
35 30 25 20 15 10 5 0 --60
, 18A I D=
=4V VGS
8A, I D=1
=10V VGS
2
3
4
5
6
7
8
9
10 IT01056
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS - V
Case Temperature, Tc - C
IT01057
No.6423-2/4
2SK2977LS
Forward Transfer Admittance, | yfs | - S
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.01 2 3 5 7 0.1 23 5 7 1.0 23 5 7 10 23 5 7 100 IT01058 10000 7 5
yfs -- ID
VDS=10V
Forward Current, IF - A
C 25
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0 0.2
IF -- VSD
VGS=0
Tc
-2 =-
C 5
75
C
C Tc=75
25C
0.6
0.01 0.4 0.8 1.0 1.2 IT01059
Drain Current, ID - A
1000 7
Diode Forward Voltage, VSD - V
SW Time -- ID
VDD=15V VGS=10V td(off) tf
Ciss, Coss, Crss -- VDS
f=1MHz
Switching Time, SW Time - ns
5 3 2
Ciss, Coss, Crss - pF
3 2
Ciss Coss
100 7 5 3 2
1000 7 5 3
tr
Crss
td(on)
2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT01060
2
10 0.1
100 0 5 10 15 20 25 30 IT01061
Drain Current, ID - A
Drain-to-Source Voltage, VDS - V
1000 7 5 3 2
10 9
VGS -- Qg
VDS=10V ID=18A
ASO
Gate-to-Source Voltage, VGS - V
8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40
IDP=120A ID=30A
10
--25C
Drain Current, ID - A
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2
100s
1m
10
DC 0 op ms era tio n
s
ms
Operation in this area is limited by RDS(on). Tc=25C
2 3
Total Gate Charge, Qg - nC
2.5
0.1 Single pulse 23 5 7 1.0 0.1
IT01062 40
Drain-to-Source Voltage, VDS - V
5 7 10
2
3
5 7 100 IT01063
PD -- Ta
Allowable Power Dissipation, PD - W
PD -- Tc
Allowable Power Dissipation, PD - W
35 30 25 20 15 10 5 0
2.0
1.5
1.0
0.5
0 0 20 40 60 80 100 120 140 160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta - C
IT01065
Case Temperature, Tc - C
IT01064
No.6423-3/4
2SK2977LS
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice.
PS No.6423-4/4


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